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US Patent Issued to Intel on April 7 for "Fill of vias in single and dual damascene structures using self-assembled monolayer" (Oregon Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,977, issued on April 7, was assigned to Intel Corp. (Santa Clara, Calif.). "Fill of vias in single and dual damascene structures using self... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Semiconductor device having a source/drain contact connected to a back-side power rail by a landing pad and a through electrode" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,978, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device having a source/drain c... Read More


US Patent Issued to Apple on April 7 for "Dual contact and power rail for high performance standard cells" (California Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,979, issued on April 7, was assigned to Apple Inc. (Cupertino, Calif.). "Dual contact and power rail for high performance standard cells" w... Read More


US Patent Issued to International Business Machines on April 7 for "Front end of line processing compatible thermally stable buried power rails" (New York Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,980, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Front end of line processing compatible ther... Read More


US Patent Issued to QUALCOMM on April 7 for "Port landing-free low-skew signal distribution with backside metallization and buried rail" (Belgian, American Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,981, issued on April 7, was assigned to QUALCOMM Inc. (San Diego). "Port landing-free low-skew signal distribution with backside metallizat... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Semiconductor devices with insulated source/drain jumper structures" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,982, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices with insulated source/... Read More


US Patent Issued to International Business Machines on April 7 for "Interconnects formed using integrated damascene and subtractive etch processing" (New York Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,983, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Interconnects formed using integrated damasc... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Semiconductor device including conductive structure and method for manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,984, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device including conductive st... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 7 for "Semiconductor structure and forming method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,985, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure and for... Read More


US Patent Issued to International Business Machines on April 7 for "Metal insulator metal capacitor (MIM capacitor)" (New York, Vermont Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,986, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Metal insulator metal capacitor (MIM capacit... Read More